Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors-Reference-Cited by-同舟云学术

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Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

Published:2013 Issue:8 Volume:15 Page:2660
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Raza Syed Raza Ali,Lee Young Tack,Chang Youn-Gyoung,Jeon Pyo Jin,Kim Jae Hoon,Ha Ryong,Choi Heon-Jin,Im Seongil

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2013/CP/C3CP44027C

Reference38 articles.

1. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

2. Ge/Si nanowire heterostructures as high-performance field-effect transistors

3. Nanowire electronic and optoelectronic devices

4. Gallium Nitride Nanowire Nanodevices

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