Enhanced polymeric lithography resists via sequential infiltration synthesis-Reference-Cited by-同舟云学术

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Enhanced polymeric lithography resists via sequential infiltration synthesis

Published:2011 Issue:32 Volume:21 Page:11722
ISSN:0959-9428
Container-title:Journal of Materials Chemistry
language:en
Short-container-title:J. Mater. Chem.

Author:

Tseng Yu-Chih,Peng Qing,Ocola Leonidas E.,Czaplewski David A.,Elam Jeffrey W.,Darling Seth B.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2011/JM/C1JM12461G

Reference20 articles.

1. Spatial resolution limits in electron beam nanolithography

2. Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment

3. Increased pattern transfer fidelity of ZEP 520A during reactive ion etching through chemical modifications by additional dosing of the electron beam resist

4. PRIME process for deep UV and E-beam lithography

5. Application of Plasmask R resist and the DESIRE process to lithography at 248 nm

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1. Revealing the Chemical Interactions between PMMA and TMA for Insights into Sequential Infiltration Synthesis;Macromolecules;2024-09-09

2. Heterometallic Ti-Zr oxo nanocluster photoresists for advanced lithography;Science China Materials;2024-08-06

3. Tailoring the Interfacial Interactions of Porous Polymer Membranes to Accelerate Atomic Layer Deposition: The Latent Path to Antifouling Membranes;Chemistry of Materials;2024-04-05

4. Sequential Infiltration Synthesis of Silicon Dioxide in Polymers with Ester Groups─Insight from In Situ Infrared Spectroscopy;The Journal of Physical Chemistry C;2024-04-03

5. Volume compensating materials after vapor phase infiltration: effect of different butyl isomers of polymer side-chains on high process temperature durability;Japanese Journal of Applied Physics;2024-03-21

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