Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture-Reference-Cited by-同舟云学术

Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

Published:2019 Issue:67 Volume:55 Page:9915-9918
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Zhou Guangdong¹²³⁴⁵^ORCID,Sun Bai⁶⁷⁸⁴^ORCID,Ren Zhijun¹²³⁴,Wang Lidan⁶⁷⁸⁴,Xu Cunyun⁵⁹¹⁰⁴,Wu Bo¹¹¹²⁴,Li Ping¹¹¹²⁴,Yao Yanqing⁵⁹¹⁰⁴,Duan Shukai⁵⁹¹⁰⁴^ORCID

Affiliation:

1. School of Science

2. Guizhou institute of Technology

3. Guiyang 55003

4. China

5. School of Artificial Intelligence

6. School of Physical Science and Technology

7. Southwest Jiaotong University

8. Chengdu

9. Southwest University

10. Chongqing 400715

11. School of Physics and Electronic Science

12. Zunyi Normal College

Abstract

Reversion between resistor and memristor and memory logic functions induced by moisture.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CC/C9CC04069B

Reference41 articles.

1. From biomaterial-based data storage to bio-inspired artificial synapse

2. Pyrene-affixed triazoles: a new class of molecular semiconductors for robust, non-volatile resistive memory devices

3. Carbon nanotube transistors scaled to a 40-nanometer footprint

4. The future of electronics based on memristive systems

5. Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality

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