Growth of ideal amorphous carbon films at low temperature by e-beam evaporation
Author:
Affiliation:
1. College of Materials Science & Technology
2. Jiangsu Key Laboratory of Materials and Technology for Energy Conversion
3. Nanjing University of Aeronautics & Astronautics
4. Nanjing 210016
5. PR
Abstract
Ideal amorphous carbon prepared at low temperature by e-beam evaporation has potential as buffer layers for Ge growth on Si.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA04047K
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