Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors-Reference-Cited by-同舟云学术

Solution processable amorphous hafnium silicate dielectrics and their application in oxide thin film transistors

Published:2015 Issue:43 Volume:3 Page:11497-11504
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Gao Y. N.¹²³⁴⁵,Xu Y. L.¹²³⁴⁵,Lu J. G.⁶⁷⁸⁹⁵,Zhang J. H.¹²³⁴⁵,Li X. F.¹²³⁴⁵

Affiliation:

1. Key Laboratory of Advanced Display and System Application

2. Ministry of Education

3. Shanghai University

4. Shanghai 200072

5. China

6. Key Laboratory of Silicon Materials

7. Department of Materials Science and Engineering

8. Zhejiang University

9. Hangzhou 310027

Abstract

Novel solution-processed amorphous high-k dielectrics for thin film transistors (TFTs) have been systemically studied with the objective of achieving high performance and reducing costs for the next generation displays.

Funder

Science and Technology Commission of Shanghai Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02485D

Reference47 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

3. High-Mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-κ Alumina Dielectric Working in Enhancement Mode

4. Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates

5. Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

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