Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD-Reference-Cited by-同舟云学术

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Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

Published:2019 Issue:12 Volume:21 Page:2009-2017
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Abd Rahman Mohd Nazri¹²³⁴⁵^ORCID,Talik Noor Azrina¹²³⁴⁵,Abdul Khudus Muhammad I. M.¹²³⁴⁵,Sulaiman Abdullah Fadil¹²³⁴⁵,Allif Kamarul¹²³⁴⁵^ORCID,Zahir Norhilmi Mohd¹²³⁴⁵,Shuhaimi Ahmad¹²³⁴⁵

Affiliation:

1. Low Dimensional Material Research Centre (LDMRC)

2. Department of Physics

3. University of Malaya

4. Kuala Lumpur

5. Malaysia

Abstract

A smooth and dense single-crystalline AlN was successfully grown by tailoring the flux density of ammonia.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00014C

Reference43 articles.

1. The intrinsic thermal conductivity of AIN

2. Optical and structural properties of III-V nitrides under pressure

3. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

4. Sandwich method to grow high quality AlN by MOCVD

5. Advances in group III-nitride-based deep UV light-emitting diode technology

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1. Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition;Crystals;2024-04-16

2. Improved Modulation Bandwidth of c-Plane Micro-LED Arrays by Varying Si Doping in the Quantum Barrier;IEEE Transactions on Electron Devices;2024-03

3. Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C);Micro and Nanostructures;2023-11

4. Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.;Surfaces and Interfaces;2023-08

5. Enhanced structural and optical properties of high Al composition non-polar a-plane AlGaN epitaxial layer by optimizing growth flow sequence;Journal of Materials Science: Materials in Electronics;2023-07-31

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