The modulation of Si1−xGex nanowires by correlation of inlet gas ratio with H2 gas content-Reference-Cited by-同舟云学术

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The modulation of Si1−xGex nanowires by correlation of inlet gas ratio with H2 gas content

Published:2011 Issue:16 Volume:13 Page:5204
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lee Woo-Jung,Ma Jin Won,Bae Jung Min,Park Sang Han,Cho Mann-Ho,Ahn Jae Pyung

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2011/CE/C1CE05157A

Reference35 articles.

1. Band-Gap Modulation in Single-Crystalline Si1-xGex Nanowires

2. Study on the synthesis of high quality single crystalline Si1−xGex nanowire and its transport properties

3. Local modes of bond-centered hydrogen in Si:Ge and Ge:Si

4. SiGe HBTs and HFETs

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1. Amorphization driven Na-alloying in SixGe1−x alloy nanowires for Na-ion batteries;Journal of Materials Chemistry A;2021

2. Oxidation Mechanism of Si1–xGex Nanowires with Au Catalyst Tip as a Function of Ge Content;ACS Applied Materials & Interfaces;2017-10-13

3. Zintl layer formation during perovskite atomic layer deposition on Ge (001);The Journal of Chemical Physics;2017-02-07

4. Ultrafast photocarrier dynamics related to defect states of Si1−xGex nanowires measured by optical pump–THz probe spectroscopy;Nanoscale;2017

5. Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications;Chemical Reviews;2013-11-22

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