GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon-Reference-Cited by-同舟云学术

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GaAs nanoscale membranes: prospects for seamless integration of III–Vs on silicon

Published:2020 Issue:2 Volume:12 Page:815-824
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Raya Andrés M.¹²³⁴⁵^ORCID,Friedl Martin¹²³⁴⁵,Martí-Sánchez Sara⁶⁷⁸⁹¹⁰^ORCID,Dubrovskii Vladimir G.¹¹¹²¹³,Francaviglia Luca¹²³⁴⁵,Alén Benito¹⁴¹⁵¹⁶¹⁷¹⁰,Morgan Nicholas¹²³⁴⁵,Tütüncüoglu Gözde¹²³⁴⁵,Ramasse Quentin M.¹⁸¹⁹²⁰²¹²²,Fuster David¹⁴¹⁵¹⁶¹⁷¹⁰,Llorens Jose M.¹⁴¹⁵¹⁶¹⁷¹⁰,Arbiol Jordi⁶⁷⁸⁹¹⁰^ORCID,Fontcuberta i Morral Anna¹²³⁴⁵^ORCID

Affiliation:

1. Laboratoire des Matériaux Semiconducteurs

2. Institute of Materials

3. Faculty of Engineering

4. École Polytechnique Fédérale de Lausanne

5. EPFL

6. Catalan Institute of Nanoscience and Nanotechnology (ICN2)

7. CSIC and BIST

8. Campus UAB

9. 08193 Barcelona

10. Spain

11. ITMO University

12. 197101 St. Petersburg

13. Russia

14. Instituto de Micro y Nanotecnología

15. IMN-CNM

16. CSIC (CEI UAM+CSIC)

17. 28760 Tres Cantos

18. SuperSTEM Laboratory

19. SciTech Daresbury Campus

20. Daresbury WA4 4AD

21. UK

22. School of Chemical and Process Engineering

Abstract

Selective area epitaxy of GaAs nanoscale membranes on silicon. Small apertures result in a majority defect-free structures.

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Russian Science Foundation

Ministerio de Economía y Competitividad

Comunidad de Madrid

European Regional Development Fund

“la Caixa” Foundation

Generalitat de Catalunya

Horizon 2020 Framework Programme

Consejo Superior de Investigaciones Científicas

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR08453C

Reference65 articles.

1. High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth

2. Nanowire photonics

3. Semiconductor nanowire lasers

4. III–V nanowires and nanowire optoelectronic devices

5. Complete thermoelectric benchmarking of individual InSb nanowires using combined micro-Raman and electric transport analysis

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1. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices;Nano Letters;2024-05-22

2. Cryogenic multiplexing using selective area grown nanowires;Nature Communications;2023-11-25

3. Crystal phase control in self-catalyzed GaAs nanowires grown on pre-etched Si substrates;Materials Advances;2023

4. Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels;Journal of Applied Physics;2022-07-14

5. Direct growth and size tuning of InAs/GaAs quantum dots on transferable silicon nanomembranes for solar cells application;Journal of Materials Science: Materials in Electronics;2021-06-15

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