Sn vacancy engineering for enhancing the thermoelectric performance of two-dimensional SnS-Reference-Cited by-同舟云学术

Sn vacancy engineering for enhancing the thermoelectric performance of two-dimensional SnS

Published:2019 Issue:11 Volume:7 Page:3351-3359
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yang Heng Quan¹²³,Wang Xiao Yang⁴⁵³,Wu Hong¹²³,Zhang Bin⁶²³,Xie Dan Dan¹²³,Chen Yong Jin⁷⁸³,Lu Xu¹²³^ORCID,Han Xiao Dong⁷⁸³,Miao Lei⁴⁵³^ORCID,Zhou Xiao Yuan¹²³⁶²^ORCID

Affiliation:

1. Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University

2. Chongqing 401331

3. P. R. China

4. School of Material Science and Engineering, Guilin University of Electronic Technology

5. Guilin 541004

6. Analytical and Testing Center of Chongqing University

7. Beijing Key Laboratory and Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology

8. Beijing 100124

Abstract

A significant enhancement in the thermoelectric performance of polycrystalline SnS resulting from increasing the hole concentration through Sn vacancy engineering.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangxi Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC05711G

Reference42 articles.

1. Van der Waals heterostructures

2. Graphene-Like Two-Dimensional Materials