Low operating voltage ambipolar graphene oxide-floating-gate memory devices based on quantum dots-Reference-Cited by-同舟云学术

Low operating voltage ambipolar graphene oxide-floating-gate memory devices based on quantum dots

Published:2016 Issue:7 Volume:4 Page:1420-1424
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Che Yongli¹²³⁴⁵,Zhang Yating¹²³⁴⁵,Cao Xiaolong⁶⁷⁸⁵,Song Xiaoxian¹²³⁴⁵,Cao Mingxuan¹²³⁴⁵,Dai Haitao⁹¹⁰³⁴⁵,Yang Junbo¹¹¹²¹³⁵,Zhang Guizhong¹²³⁴⁵,Yao Jianquan¹²³⁴⁵

Affiliation:

1. Institute of Laser and Opto-Electronics

2. College of Precision Instruments and Opto-Electronics Engineering

3. Tianjin University

4. Tianjin 300072

5. China

6. College of Mechanical and Electronic Engineering

7. Shandong University of Science and Technology

8. Qingdao

9. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology

10. School of Science

11. Center of Material Science

12. National University of Defense Technology

13. Changsha 410073

Abstract

Solution processed quantum dots (QDs) were employed as semiconductor layers in low operating voltage nonvolatile memory devices where graphene oxide (GO) is embedded as a charge storage element.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC04007H

Reference28 articles.

1. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

2. Nonvolatile Analog Memory Transistor Based on Carbon Nanotubes and C60 Molecules

3. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

4. Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory

5. Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric

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