Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications-Reference-Cited by-同舟云学术

Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications

Published:2017 Issue:88 Volume:7 Page:55835-55838
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Ding Xiangzhen¹²³⁴⁵^ORCID,Miao Bin¹²³⁴⁵,Gu Zhiqi¹²³⁴⁵,Wu Baojun⁶²⁷⁸⁵,Hu Yimin⁶²⁷⁸⁵,Wang Hong⁶²⁷⁸⁵,Zhang Jian⁹²³⁴⁵,Wu Dongmin¹²³⁴⁵,Lu Wenhui¹⁰¹¹¹²¹³⁵,Li Jiadong¹²³⁴⁵

Affiliation:

1. i-Lab

2. Suzhou Institute of Nano-Tech and Nano-Bionics

3. Chinese Academy of Sciences

4. Suzhou 215125

5. People’s Republic of China

6. Division of Nano-devices and Materials

7. Chinese Academy of Sciences (CAS)

8. Suzhou 215123

9. NANO-X

10. Department of Applied Physics

11. College of Science

12. Huzhou University

13. Huzhou 313000

Abstract

An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA10028K

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