Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures
Author:
Affiliation:
1. Wuhan National High Magnetic Field Center and School of Optical and Electronic Information
2. Huazhong University of Science and Technology
3. Wuhan 430074
4. China
Abstract
We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR09674K
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