Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection-Reference-Cited by-同舟云学术

Atomic layer deposition of SnSex thin films using Sn(N(CH3)2)4 and Se(Si(CH3)3)2 with NH3 co-injection

Published:2022 Issue:2 Volume:51 Page:594-601
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Jeon Jeong Woo¹^ORCID,Yoo Chanyoung¹^ORCID,Kim Woohyun¹^ORCID,Choi Wonho¹,Park Byongwoo¹,Lee Yoon Kyeung²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

2. Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea

Abstract

This study introduces the atomic layer deposition (ALD) of tin selenide thin films. By changing the growth temperature, the chemical composition of the Sn/Se ratio could be varied for the given precursor injection conditions.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D1DT03487A

Reference38 articles.

1. Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

2. Tin-selenide as a futuristic material: properties and applications

3. Layered Semiconducting 2D Materials for Future Transistor Applications

4. Ultrathin SnSe2Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors

5. Phase controllable synthesis of SnSe and SnSe2 films with tunable photoresponse properties

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