Ultrathin SnSe2Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors-Reference-Cited by-同舟云学术

Ultrathin SnSe2Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors

Published:2015-11-06 Issue:48 Volume:27 Page:8035-8041
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhou Xing¹,Gan Lin¹,Tian Wenming²,Zhang Qi¹,Jin Shengye²,Li Huiqiao¹,Bando Yoshio³,Golberg Dmitri³,Zhai Tianyou¹

Affiliation:

1. State Key Laboratory of Material Processing and Die & Mould Technology; School of Materials Science and Engineering; Huazhong University of Science and Technology (HUST); Wuhan Hubei 430074 P. R. China

2. State Key Laboratory of Molecular Reaction Dynamics; Dalian Institute of Chemical Physics; Chinese Academy of Sciences; Dalian Liaoning 116023 P. R. China

3. International Center for Materials Nanoarchitectonics (MANA); National Institute for Materials Science (NIMS); Namiki 1-1 Tsukuba Ibaraki 305-0044 Japan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201503873/fullpdf

Reference70 articles.

1. Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

2. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared

3. Single-Layer MoS2 Phototransistors

4. Ultrasensitive photodetectors based on monolayer MoS2

5. Metal Contacts on Physical Vapor Deposited Monolayer MoS2

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