p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices-Reference-Cited by-同舟云学术

p-MoS2/n-InSe van der Waals heterojunctions and their applications in all-2D optoelectronic devices

Published:2019 Issue:60 Volume:9 Page:35039-35044
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Li Pan¹²³⁴⁵,Yuan Kai¹²³⁴⁵,Lin Der-Yuh⁶⁷⁸⁹,Wang Tingting¹²³⁴⁵,Du Wanying¹²³⁴⁵,Wei Zhongming¹⁰¹¹¹²¹³⁵^ORCID,Watanabe Kenji¹⁴¹⁵¹⁶^ORCID,Taniguchi Takashi¹⁴¹⁵¹⁶,Ye Yu¹²³⁴⁵^ORCID,Dai Lun¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory for Artificial Microstructure & Mesoscopic Physics

2. School of Physics

3. Peking University

4. Beijing 100871

5. China

6. Department of Electronics Engineering

7. National Changhua University of Education

8. Changhua 50007

9. Taiwan

10. State Key Laboratory of Superlattices and Microstructures

11. Institute of Semiconductors

12. Chinese Academy of Sciences

13. Beijing 100083

14. National Institute for Materials Science

15. Tsukuba 305-0044

16. Japan

Abstract

A library of 2D semiconductors are prepared providing a new platform for developing high-performance optoelectronic devices. All-2D optoelectronic devices based on type-II p-MoS₂/n-InSe vdWs heterojunctions operate at the near-IR wavelength range.

Funder

National Natural Science Foundation of China

Ministry of Science and Technology, Taiwan

Ministry of Education, Culture, Sports, Science and Technology

Core Research for Evolutional Science and Technology

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA06667E