Memory characteristics of organic field-effect memory transistors modulated by nano-p

Memory characteristics of organic field-effect memory transistors modulated by nano-p–n junctions

Published:2020 Issue:22 Volume:8 Page:7501-7508
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chou Wei-Yang¹²³⁴⁵^ORCID,Peng Sheng-Kuang¹²³⁴⁵,Wu Fu-Chiao¹²³⁴⁵,Sheu Hwo-Shuenn⁶⁷⁵,Wang Yu-Fu¹²³⁴⁵,Huang Po-Kang¹²³⁴⁵,Cheng Horng-Long¹²³⁴⁵^ORCID

Affiliation:

1. Department of Photonics

2. Advanced Optoelectronic Technology Center

3. National Cheng Kung University

4. Tainan 701

5. Taiwan

6. National Synchrotron Radiation Research Center

7. Hsinchu 300

Abstract

The enhanced interface properties and memory characteristics are achieved by controlling the growth conditions of different nano-p–n junction structures.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01233E

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4. High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash Memory

5. Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

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