In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors-Reference-Cited by-同舟云学术

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In situ memory characteristics of thermal disturbance in low-voltage organic field-effect transistors

Published:2022-05 Issue: Volume:164 Page:110628
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Chou Wei-Yang^ORCID,Peng Sheng-Kuang,Lin Hsin-Hsiu,Cheng Horng-Long^ORCID

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference32 articles.

1. Flexible and printed organic transistors: from materials to integrated circuits;Matsui;Org. Electron.,2019

2. Organic heterojunction transistors for mechanically flexible multivalued logic circuits;Panigrahi;APEX,2021

3. Flexible organic thin film transistors incorporating a biodegradable CO2-based polymer as the substrate and dielectric material;Rullyani;Sci. Rep.,2018

4. Flexible low-voltage organic thin-film transistors and PMOS inverters: the effect of channel width on noise margin;Singh;J. Phys. D Appl. Phys.,2021

5. Small molecule/polymer blends prepared by environmentally-friendly process for mechanically-stable flexible organic field-effect transistors;Onojima;Org. Electron.,2020

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1. Light-Assisted/Light-Driven Memory Behaviors with Small Molecule-Fluoropolymer-Small Molecule-Stacked Floating-Gate Heterostructures;ACS Photonics;2023-04-04

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