Gamma-ray irradiation-induced oxidation and disproportionation at the amorphous SiO2/Si interfaces

Author:

Meng Dechao12345ORCID,Lan Mu12345ORCID,Yang Zeng-hui12345,Hu Shouliang5264,Zhang Guanghui12345,Liang Chuanhui7284,Zhan Haoran91034,Liu Jiang91034ORCID,Li Ming5264,Zhou Hang12345,Zuo Xu1112134ORCID,Song Yu12345ORCID,Wei Su-Huai141516ORCID

Affiliation:

1. Microsystem and Terahertz Research Center

2. China Academy of Engineering Physics

3. Chengdu 610200

4. China

5. Institute of Electronic Engineering

6. Mianyang 621999

7. Institute of Materials

8. Chengdu

9. Chengdu Green Energy and Green Manufacturing Technology R&D Center

10. Chengdu Development Center of Science and Technology

11. College of Electronic Information and Optical Engineering

12. Nankai University

13. Tianjin 300071

14. Beijing Computational Science Research Center

15. Beijing 100193

16. P. R. China

Abstract

Distinct interfacial structure changes, including oxidation and disproportionation, have been found to be the main response to the Mrad dose gamma ray irradiation for SiO2/Si films.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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