Gamma-Ray Irradiation Induced Dielectric Loss of SiO<sub>2</sub>/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps-Reference-Cited by-同舟云学术

Gamma-Ray Irradiation Induced Dielectric Loss of SiO₂/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

Published:2024-01-29 Issue:2 Volume:6 Page:1339-1346
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhang Guanghui¹²^ORCID,Yang Zenghui¹²^ORCID,Li Xiaoshi¹²,Deng Shuairong¹²,Liu Yang¹²,Zhou Hang¹²,Peng Maoyang¹³,Fu Zhengping³^ORCID,Chen Rui⁴,Meng Dechao¹²,Zhong Le¹²,Zhou Quanfeng¹²,Wei Su-Huai⁵^ORCID

Affiliation:

1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, P. R. China

2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, P. R. China

3. Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230062, P. R. China

4. National Space Science Center, Chinese Academy of Sciences, Beijing 100190, P. R. China

5. Beijing Computational Science Research Center, Beijing 100193, P. R. China

Funder

State Key Laboratory of Nuclear Physics and Technology, Peking University

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01646

Reference40 articles.

1. TSV Technology and High-Energy Heavy Ions Radiation Impact Review

2. System-level design consideration and optimization of through-silicon-via inductor

3. Evolution and outlook of TSV and 3D IC/Si integration

4. Development of 3-D Silicon Module With TSV for System in Packaging

5. 3-D Integration and Through-Silicon Vias in MEMS and Microsensors

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