Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2010/CP/B927274G
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1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
2. Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors
3. Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability
4. Thermal reaction of nickel and Si[sub 0.75]Ge[sub 0.25] alloy
5. Structural properties of nickel silicided Si1 xGex(001) layers
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