High-energy proton irradiation damage on two-dimensional hexagonal boron nitride-Reference-Cited by-同舟云学术

High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

Published:2019 Issue:32 Volume:9 Page:18326-18332
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lee Dongryul¹²³⁴,Yoo Sanghyuk⁵⁶⁷⁴^ORCID,Bae Jinho¹²³⁴,Park Hyunik¹²³⁴,Kang Keonwook⁵⁶⁷⁴,Kim Jihyun¹²³⁴^ORCID

Affiliation:

1. Department of Chemical and Biological Engineering

2. Korea University

3. Seoul 02841

4. South Korea

5. Department of Mechanical Engineering

6. Yonsei University

7. Seoul 03722

Abstract

The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA03121A

Reference27 articles.

1. Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

2. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

3. Recent Progress on Fabrications and Applications of Boron Nitride Nanomaterials: A Review

4. High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

5. Two-dimensional non-volatile programmable p–n junctions

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