Reducing dielectric loss in CaCu3Ti4O12 thin films by high-pressure oxygen annealing-Reference-Cited by-同舟云学术

Reducing dielectric loss in CaCu3Ti4O12 thin films by high-pressure oxygen annealing

Author:

Lin Y.¹²³⁴⁵,Feng D. Y.¹²³⁴,Gao M.¹²³⁴,Ji Y. D.¹²³⁴,Jin L. B.¹²³⁴,Yao G.¹²³⁴,Liao F. Y.¹²³⁴,Zhang Y.¹²³⁴,Chen C. L.⁶⁷⁸⁹¹⁰

Affiliation:

1. State Key Laboratory of Electronic Thin films and Integrated Devices

2. University of Electronic Science and Technology of China

3. Chengdu

4. P. R. China

5. Institute of Electronic and Information Engineering in Dongguan

6. Department of Physics and Astronomy

7. University of Texas at San Antonio

8. San Antonio

9. USA

10. Department of Physics and the Texas Center for Superconductivity

Abstract

High pressure oxygen annealing could reduce the dielectric loss in CCTO films as well as induce obvious difference in strain status.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference43 articles.

4. Ferroelectric Thin Films: Synthesis and Basic Properties, ed. C. P. d. Araujo, J. F. Scott and G. W. Taylor, Gorden and Breach, New York, 1996

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