Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition-Reference-Cited by-同舟云学术

Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

Published:2013 Issue:14 Volume:1 Page:2577
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hoffmann Rudolf C.,Kaloumenos Mareiki,Heinschke Silvio,Erdem Emre,Jakes Peter,Eichel Rüdiger-A.,Schneider Jörg J.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC00841J

Reference52 articles.

1. Transparent semiconducting oxides: materials and devices

2. Review paper: Transparent amorphous oxide semiconductor thin film transistor

3. Present status of amorphous In–Ga–Zn–O thin-film transistors

4. Low-temperature, solution-processed metal oxide thin film transistors

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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