Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study-Reference-Cited by-同舟云学术

Improved resistive switching characteristics of a multi-stacked HfO₂/Al₂O₃/HfO₂ RRAM structure for neuromorphic and synaptic applications: experimental and computational study

Published:2022 Issue:19 Volume:12 Page:11649-11656
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Khera Ejaz Ahmad¹,Mahata Chandreswar²,Imran Muhammad³^ORCID,Niaz Niaz Ahmad⁴,Hussain Fayyaz⁴^ORCID,Khalil R. M. Arif⁴,Rasheed Umbreen⁴,SungjunKim ²

Affiliation:

1. Department of Physics Bahawalnagar Campus, The Islamia University of Bahawalpur, 63100, Pakistan

2. Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea

3. Department of Physics, Govt. College University Faisalabad, 38000, Pakistan

4. Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, Pakistan

Abstract

Atomic Layer Deposition (ALD) was used for a tri-layer structure (HfO2/Al2O3/HfO2) at low temperature over an Indium Tin Oxide (ITO) transparent electrode.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D1RA08103A

Reference57 articles.

1. Theoretical Investigation of CsBX 3 (B = Pb, Sn; X = I, Br, Cl) Using Tran–Blaha Modified Becke–Johnson Approximation for Flexible Photoresponsive Memristors

2. Oxide-based RRAM materials for neuromorphic computing

3. Introduction of a novel guided bone regeneration memory shape based device

4. Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO2-Based Resistive Random Access Memory Devices with Different Electrode Materials

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