Theoretical Investigation of CsBX 3 (B = Pb, Sn; X = I, Br, Cl) Using Tran–Blaha Modified Becke–Johnson Approximation for Flexible Photoresponsive Memristors-Reference-Cited by-同舟云学术

Theoretical Investigation of CsBX 3 (B = Pb, Sn; X = I, Br, Cl) Using Tran–Blaha Modified Becke–Johnson Approximation for Flexible Photoresponsive Memristors

Published:2021-05-29 Issue:7 Volume:4 Page:2100011
ISSN:2513-0390
Container-title:Advanced Theory and Simulations
language:en
Short-container-title:Adv. Theory Simul.

Author:

Khera Ejaz Ahmad¹,Ullah Hafeez¹,Imran Muhammad²,Khalil R. M. Arif³,Hussain Fayyaz³^ORCID,Algadi Hassan⁴⁵

Affiliation:

1. Department of Physics The Islamia University of Bahawalpur Bahawalpur 63100 Pakistan

2. Department of Physics Govt. College University Faisalabad Faisalabad 38000 Pakistan

3. Materials Simulation Research Laboratory (MSRL) Department of Physics Bahauddin Zakariya University Multan Pakistan Multan 60800 Pakistan

4. Department of Electrical Engineering Faculty of Engineering Najran University P.O. Box 1988 Najran 11001 Saudi Arabia

5. Promising Center for Sensors and Electronic Devices (PCSED) Najran University P.O. Box 1988 Najran 11001 Saudi Arabia

Publisher

Wiley

Subject

Multidisciplinary,Modeling and Simulation,Numerical Analysis,Statistics and Probability

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adts.202100011

Reference73 articles.

1. J.Zhang W.Li Perovskite Materials Devices and Integration IntechOpen Limited London2019.

2. Organic and hybrid resistive switching materials and devices

3. Analog Memristors Based on Thickening/Thinning of Ag Nanofilaments in Amorphous Manganite Thin Films

4. High Charge Carrier Mobilities and Lifetimes in Organolead Trihalide Perovskites

5. High efficiency flexible perovskite solar cells using superior low temperature TiO2

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