Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivityn-type silicon-Reference-Cited by-同舟云学术

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Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivityn-type silicon

Published:2012-03-15 Issue:3 Volume:19 Page:340-346
ISSN:0909-0495
Container-title:Journal of Synchrotron Radiation
language:
Short-container-title:J Synchrotron Radiat

Author:

Zhang Jiaguo,Pintilie Ioana,Fretwurst Eckhart,Klanner Robert,Perrey Hanno,Schwandt Joern

Publisher

International Union of Crystallography (IUCr)

Subject

Instrumentation,Nuclear and High Energy Physics,Radiation

Link

http://journals.iucr.org/s/issues/2012/03/00/pp5012/pp5012.pdf

Reference20 articles.

1. Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs

2. Electron−hole pair creation energy in SiO2

3. The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices

4. An improved high‐frequency MOS capacitance formula

5. Femtosecond time-delay X-ray holography

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