Author:
Preda Iulian,Soriano Leonardo,Díaz-Fernández Daniel,Domínguez-Cañizares Guillermo,Gutiérrez Alejandro,Castro Germán R.,Chaboy Jesús
Abstract
This work reports an X-ray absorption near-edge structure (XANES) spectroscopy study at the NiK-edge in the early stages of growth of NiO on non-ordered SiO2, Al2O3and MgO thin films substrates. Two different coverages of NiO on the substrates have been studied. The analysis of the XANES region shows that for high coverages (80 Eq-ML) the spectra are similar to that of bulk NiO, being identical for all substrates. In contrast, for low coverages (1 Eq-ML) the spectra differ from that of large coverages indicating that the local order around Ni is limited to the first two coordination shells. In addition, the results also suggest the formation of cross-linking bonds Ni—O—M(M= Si, Al, Mg) at the interface.
Publisher
International Union of Crystallography (IUCr)
Subject
Instrumentation,Nuclear and High Energy Physics,Radiation
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献