Fine structure of spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with FPA diode-Reference-Cited by-同舟云学术

Fine structure of spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with FPA diode

Published:2021-07-28 Issue:3 Volume: Page:47-53
ISSN:1996-0948
Container-title:Applied Physics
language:
Short-container-title:Prikl. fiz.

Author:

Stuchinsky Victor¹,Vishnyakov Alekcey¹

Affiliation:

1. "Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch"

Abstract

The three-dimensional Monte Carlo simulation of charge-carrier diffusion in a mercury-cadmium-tellurium based focal plane array (FPA) was used to calculate the spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with a selected FPA diode in the limit of largest and lowest diode photocurrents. The simulation was performed for a standard 2D n-on-p FPA with square photodiodes. Fine features in measured spot-scan profiles due to the presence of FPA structure were identified, and the de-pendence of these features on the boundary conditions for diffusing charge carriers at the n-type diode regions was demonstrated. An explanation to the shape of the profiles, fully con-sistent with the computational procedure of the problem, is given.

Publisher

Joint-Stock Company Scientific and Production Association - ORION

Subject

General Physics and Astronomy

Reference12 articles.

1. Vishnyakov A. V., Stuchinsky V. A., Brunev D. V., Zverev A. V., Dvoretsky S. A. // Appl. Phys. Lett. 2014. Vol. 104. P. 092112. https://doi.org/10.1063/1.4867349.

2. Vishnyakov A. V., Stuchinsky V. A., Brunev D. V., Zverev A. V., Dvoretsky S. A. // J. Appl. Phys. 2015. Vol. 118. P. 124508. https://doi.org/10.1063/1.4931614.

3. Vishnyakov A. V., Stuchinsky V. A., Brunev D. V., Zverev A. V., Dvoretsky S. A. // Proc. SPIE 9220, Infra-red Sensors, Devices, and Applications IV, Ed. by P. D. LeVan, A. K. Sood, P. Wijewarnasuriya, and A. I. D’Souza, 92200W (7 October 2014); doi: 10.1117/12.2061573.

4. Dvoretsky S. A., Vasil’ev V. V., Predein A. V., Vishnyakov A. V., Stuchinsky V. A., Brunev D. V., Zverev A. V. // Determination of the bulk and local diffu-sion-length values of charge carriers in MCT films and in the absorber layers of MCT-based photovoltaic IR FPA detectors, in: Optoelectronics – Materials and De-vices, Ed. by S. L. Pyshkin and J. Ballato, IntechOpen, doi: 10.5772/60717.

5. Вишняков А. В., Стучинский В. А., Брунев Д. В., Зверев А. В., Дворецкий С. А. // Прикладная физика. 2015. № 1. С. 44.

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