Affiliation:
1. "Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch"
Abstract
The three-dimensional Monte Carlo simulation of charge-carrier diffusion in a mercury-cadmium-tellurium based focal plane array (FPA) was used to calculate the spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with a selected FPA diode in the limit of largest and lowest diode photocurrents. The simulation was performed for a standard 2D n-on-p FPA with square photodiodes. Fine features in measured spot-scan profiles due to the presence of FPA structure were identified, and the de-pendence of these features on the boundary conditions for diffusing charge carriers at the n-type diode regions was demonstrated. An explanation to the shape of the profiles, fully con-sistent with the computational procedure of the problem, is given.
Publisher
Joint-Stock Company Scientific and Production Association - ORION
Subject
General Physics and Astronomy
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献