MTF-Based Approach to Determining the Bulk Diffusion Length of Photogenerated Charge Carriers in the Absorber Material of MCT-Based Infrared Focal Plane Arrays
Author:
Publisher
Allerton Press
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
Link
https://link.springer.com/content/pdf/10.3103/S8756699023020140.pdf
Reference18 articles.
1. A. Rogalski, Infrared Detectors, 2nd ed. (CRC Press, Boca Raton, Fla., 2010). https://doi.org/10.1201/b10319
2. H. Jung, H. C. Lee, and C.-K. Kim, ‘‘Measurement of the steady-state minority carrier diffusion length in a HgCdTe photodiode,’’ Jpn. J. Appl. Phys. 35, L1321 (1996). https://doi.org/10.1143/JJAP.35.L1321
3. S. A. Dvoretsky, V. V. Vasil’ev, A. V. Predein, A. V. Vishnyakov, V. A. Stuchinsky, D. V. Brunev, and A. V. Zverev, ‘‘Determination of the bulk and local diffusion-length values of charge carriers in MCT films and in the absorber layers of MCT-based photovoltaic IR FPA detectors,’’ in Optoelectronics—Materials and Devices, Ed. by S. L. Pyshkin and J. Ballato (Intech, 2015). https://doi.org/10.5772/60717
4. B. E. Artz, ‘‘Electron-beam-induced current determination of minority-carrier diffusion length and surface recombination velocity in mercury-cadmium-telluride,’’ J. Appl. Phys. 57, 2886–2891 (1985). https://doi.org/10.1063/1.335225
5. D. A. Redfern, J. A. Thomas, C. A. Musca, J. M. Dell, and L. Faraone, ‘‘Diffusion length measurements in p-HgCdTe using laser beam induced current,’’ J. Electron. Mater. 30, 696–703 (2001). https://doi.org/10.1007/BF02665858
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