Anomalous photoluminescence in InP1−xBix
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep27867.pdf
Reference54 articles.
1. J. Yoshida, T. Kita, O. Wada & K. Oe. Temperature dependence of GaAs1−xBix band gap studied by photoreflectance spectroscopy. Japan. J. Appl. Phys. 42, 371–374 (2003).
2. S. Tixier et al. Molecular beam epitaxy growth of GaAs1−xBix . Appl. Phys. Lett. 82, 2245–2247 (2003).
3. S. Francoeur et al. Band gap of GaAs1−xBix, 0 < x < 3.6%. Appl. Phys. Lett. 82, 3874–3876 (2003).
4. B. Fluegel et al. Giant Spin-Orbit Bowing in GaAs1−xBix . Phys. Rev. Lett. 97, 067205 (2006).
5. Z. Batool et al. The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing. J. Appl. Phys. 111, 113108 (2012).
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