A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep22466.pdf
Reference25 articles.
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2. Lei, W., Gu, R. J., Antoszewski, J., Dell, J. & Faraone, L. GaSb: a new alternative substrate for epitaxial growth of HgCdTe. J. Electron. Mater. 43, 2788–2794 (2014).
3. Lei, W. et al. MBE growth of mid-wave infrared HgCdTe layers on GaSb alternative substrates. J. Electron. Mater. 44, 3180–3187 (2015).
4. Rogalski, A. HgCdTe infrared detector material: history, status and outlook. Rep. Prog. Phys. 68, 2267–2336 (2005).
5. Zha, F. X. et al. Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe. Appl. Phys. Lett. 93, 151113 (2008).
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