Suppression of compensating native defect formation during semiconductor processing via excess carriers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep27954.pdf
Reference39 articles.
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4. Fujita, S. & Fujita, S. Photoassisted growth of II-VI semiconductor films. Applied Surface Science 86, 431–436 (1995).
5. Bryan, Z. et al. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN. Appl. Phys. Lett. 105, 222101 (2014).
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