Dual-mode operation of 2D material-base hot electron transistors

Author:

Lan Yann-Wen,Torres, Carlos M.,Zhu Xiaodan,Qasem Hussam,Adleman James R.,Lerner Mitchell B.,Tsai Shin-Hung,Shi Yumeng,Li Lain-Jong,Yeh Wen-Kuan,Wang Kang L.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference44 articles.

1. Mead, C. A. The Tunnel Emission Amplifier. Proc. IRE. 48, 359 (1960).

2. Heiblum, M. & Fischetti, M. V. Ballistic Hot-Electron Transistors. IBM J. Res. Dev. Vol. 34, No. 4, 530–549 (1990).

3. Hollis, M. A., Palmateer, S. C., Eastman, L. F., Dandekar, N. V. & Smith, P. M. Importance of Electron Scattering with Coupled Plasmon-Optical Phonon Modes in GaAs Planar Doped Barrier Transistors. IEEE Electron Device Letters. Vol. 4, Issue 12, 440–443 (1983).

4. Luryi, S. An Induced Base Hot-Electron Transistor. IEEE Electron Device Letters. Vol. 6, No. 4, 178–180 (1985).

5. Luryi, S. Induced Base Transistor. Physica 134B, 466–469 (1985).

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