Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep34545.pdf
Reference25 articles.
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3. O’Donnell, K., Martin, R. & Middleton, P. Origin of luminescence from InGaN diodes. Phys. Rev. Lett. 82, 237–240 (1999).
4. See, for example, a recent review, Pimputkar, S., Speck, J. S., DenBaars, S. P. & Nakamura, S. Prospects for LED lighting. Nat. Photon 3, 180–182 (2009).
5. Iveland, J., Martinelli, L., Peretti, J., Speck, J. S. & Weisbuch, C. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett. 110, 177406 (2013).
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