Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric-Reference-Cited by-同舟云学术

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Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

Published:2015-11-04 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Ki Min Bok,Kim Seong K.,Jun Kim Seong,Ho Kim Sung,Kang Min-A,Park Chong-Yun,Song Wooseok,Myung Sung,Lim Jongsun,An Ki-Seok

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep16001.pdf

Reference32 articles.

1. Sze, S. M. & Ng, K. K. Physics of Semiconductor Device. Wiley-Interscience (2007).

2. Wilk, G. D., Wallace, R. M. & Anthony, J. M. High-k gate dielectrics: current status and materials properties. J. Appl. Phys. 89, 5243–5275 (2001).

3. Wong, H. & Iwai, H. On the scaling issues and high-k replacement of ultrathin gate dielectrics for nanoscale MOS transistors. Microelectron. 83, 1867–1904 (2001).

4. Aoki, Y. & Kunitake, T. Solution-based fabrication of high-k gate dielectrics for next-generation metal-oxide semiconductor transistors. Adv. Mater. 16, 118–123 (2004).

5. Javey, A. et al. High-k dielectrics for advanced carbon-nanotube transistors and logic gates. Nat. Matter. 1, 241–246 (2002).

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