Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis-Reference-Cited by-同舟云学术

Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis

Published:2017-02-13 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Kim MinKwan,Choi Sunghan,Lee Joo-Hyung,Park ChungHyun,Chung Tae-Hoon,Baek Jong Hyeob,Cho Yong-Hoon

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep42221.pdf

Reference55 articles.

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3. Horiuchi, N. Light-emitting diodes: Natural white light. Nat. Photon. 4, 738–738 (2010).

4. McCluskey, M. D., Van de Walle, C. G., Master, C. P., Romano, L. T. & Johnson, N. M. Large band gap bowing of InxGa1-xN alloys. Appl. Phys. Lett. 72, 2725–2726 (1998).

5. Wright, A. F. & Nelson, J. S. Bowing parameters for zinc-blende Al1−xGaxN and Ga1−xInxN. Appl. Phys. Lett. 66, 3051–3053 (1995).

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