Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures-Reference-Cited by-同舟云学术

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

Published:2014-10-06 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Wang Jiaming,Xu Fujun,Zhang Xia,An Wei,Li Xin-Zheng,Song Jie,Ge Weikun,Tian Guangshan,Lu Jing,Wang Xinqiang,Tang Ning,Yang Zhijian,Li Wei,Wang Weiying,Jin Peng,Chen Yonghai,Shen Bo

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep06521.pdf

Reference20 articles.

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2. Khan, A., Balakrishnan, K. & Katona, T. Ultraviolet light-emitting diodes based on group three nitrides. Nat. Photonics 2, 77 (2008).

3. McDonald, S. A. et al. Solution-processed PbS quantum dot infrared photodetectors and photovoltaics. Nat. Mater. 4, 138 (2005).

4. Lorenz, K. et al. Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state. Phys. Rev. Lett. 97, 085501 (2006).

5. Carlin, J.-F. & Ilegems, M. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN. Appl. Phys. Lett. 83, 668–670 (2003).

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