Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep12826.pdf
Reference39 articles.
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4. Maksymovych, P. et al. Polarization control of electron tunneling into ferroelectric surfaces. Science 324, 1421–5 (2009).
5. Tybell, T., Ahn, C. H. & Triscone, J.-M. Ferroelectricity in thin perovskite films. Appl. Phys. Lett. 75, 856–858 (1999).
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