Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers-Reference-Cited by-同舟云学术

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Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers

Published:2015-01-16 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Nguyen Hieu Pham Trung,Djavid Mehrdad,Woo Steffi Y.,Liu Xianhe,Connie Ashfiqua T.,Sadaf Sharif,Wang Qi,Botton Gianluigi A.,Shih Ishiang,Mi Zetian

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep07744.pdf

Reference59 articles.

1. Qian, F. et al. Gallium nitride-based nanowire radial heterostructures for nanophotonics. Nano Lett. 4, 1975–1979 (2004).

2. Guo, W., Zhang, M., Banerjee, A. & Bhattacharya, P. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001)silicon by molecular beam epitaxy. Nano Lett. 10, 3355–3359 (2010).

3. Kikuchi, A., Kawai, M., Tada, M. & Kishino, K. InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111)Si substrate. Jpn. J. Appl. Phys. 43, L1524–L1526 (2004).

4. Kim, H.-M. et al. High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays. Nano Lett. 4, 1059–1062 (2004).

5. Guo, W., Banerjee, A., Bhattacharya, P. & Ooi, B. S. InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon. Appl. Phys. Lett. 98, 193102 (2011).

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