Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation-Reference-Cited by-同舟云学术

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Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

Published:2016-02-17 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Yu Muxi,Cai Yimao,Wang Zongwei,Fang Yichen,Liu Yefan,Yu Zhizhen,Pan Yue,Zhang Zhenxing,Tan Jing,Yang Xue,Li Ming,Huang Ru

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep21020.pdf

Reference50 articles.

1. Meena, J.-S., Sze, S.-M., Chand, U. & Tseng, T.-Y. Overview of emerging nonvolatile memory technologies. Nanoscale Res. Lett. 9, 526 (2014).

2. Burr, G. W. et al. Overview of candidate device technologies for storage-class memory. IBM J. Res. Dev. 52, 449–464 (2008).

3. Bez, R. & Pirovano, A. Non-volatile memory technologies: emerging concepts and new materials. Mater. Sci. Semicond. Process. 7, 349–355 (2004).

4. Chen, F. T. et al. Resistance switching for RRAM applications. Sci. China Inf. Sci. 54, 1073–1086 (2011).

5. Duan, S., Hu, X., Wang, L. & Li, C. Analog memristive memory with applications in audio signal processing. Sci. China Inf. Sci. 57, 042406 (2014).

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