X-ray absorption near edge spectroscopy with a superconducting detector for nitrogen dopants in SiC
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep00831.pdf
Reference30 articles.
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3. Laube, M. et al. Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC. J. Appl. Phys. 92, 549–554 (2002).
4. Castell, M., Muller, D. & Voyles, P. Dopant mapping for the nanotechnology age. Nature Mater. 2, 129–131 (2003).
5. Voyles, P., Muller, D., Grazul, J., Citrin, P. & Gossmann H. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si. Nature 416, 826–829 (2002).
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