Rare-metal-free high-performance Ga-Sn-O thin film transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep44326.pdf
Reference45 articles.
1. Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004).
2. Yabuta, H. et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering. Appl. Phys. Lett. 89, 112123 (2006).
3. Hosono, H. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application. J. Non. Cryst. Solids 352, 851–858 (2006).
4. Kamiya, T., Nomura, K. & Hosono, H. Present status of amorphous In–Ga–Zn–O thin-film transistors. Sci. Technol. Adv. Mater 11, 044305 (2010).
5. Fukumoto, E. et al. High-mobility oxide TFT for circuit integration of AMOLEDs. J. Soc. Inf. Disp. 19, 867–872 (2011).
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