Producing air-stable monolayers of phosphorene and their defect engineering-Reference-Cited by-同舟云学术

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Producing air-stable monolayers of phosphorene and their defect engineering

Published:2016-01-22 Issue:1 Volume:7 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Pei Jiajie,Gai Xin,Yang Jiong,Wang Xibin,Yu Zongfu,Choi Duk-Yong,Luther-Davies Barry,Lu Yuerui

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms10450.pdf

Reference47 articles.

1. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014).

2. Buscema, M. et al. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14, 3347–3352 (2014).

3. Fei, R. & Yang, L. Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus. Nano Lett. 14, 2884–2889 (2014).

4. Xia, F., Wang, H. & Jia, Y. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014).

5. Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014).

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