Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep13599.pdf
Reference35 articles.
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3. Nagashima, K. et al. Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire. Nano Lett. 10, 1359–1363 (2010).
4. Oka, K. et al. Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions. J. Am. Chem. Soc. 132, 6634–6635 (2010).
5. Chu, D., Younis, A. & Li, S. Direct growth of TiO2 nanotubes on transparent substrates and their resistive switching characteristics. J. Phys. D. Appl. Phys. 45, 355306 (2012).
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