Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes-Reference-Cited by-同舟云学术

Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes

Published:2015-12 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

You Tiangui,Ou Xin,Niu Gang,Bärwolf Florian,Li Guodong,Du Nan,Bürger Danilo,Skorupa Ilona,Jia Qi,Yu Wenjie,Wang Xi,Schmidt Oliver G.,Schmidt Heidemarie

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep18623.pdf

Reference47 articles.

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2. Shuai, Y., Zhou, S., Bürger, D., Helm, M. & Schmidt, H. Nonvolatile bipolar resistive switching in Au/BiFeO3/Pt. J. Appl. Phys. 109, 124117 (2011).

3. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007).

4. Borghetti, J. et al. ‘Memristive’ switches enable ‘stateful’logic operations via material implication. Nature 464, 873–876 (2010).

5. You, T. et al. Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics. Adv. Funct. Mater. 24, 3357–3365 (2014).

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