Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature

Author:

Wang HangtianORCID,Lu HaichangORCID,Guo Zongxia,Li Ang,Wu Peichen,Li Jing,Xie Weiran,Sun Zhimei,Li PengORCID,Damas Héloïse,Friedel Anna MariaORCID,Migot Sylvie,Ghanbaja Jaafar,Moreau Luc,Fagot-Revurat Yannick,Petit-Watelot SébastienORCID,Hauet ThomasORCID,Robertson John,Mangin StéphaneORCID,Zhao WeishengORCID,Nie TianxiaoORCID

Abstract

AbstractDespite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary

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