Robust Field‐Free Switching Using Large Unconventional Spin‐Orbit Torque in an All‐Van der Waals Heterostructure

Author:

Zhang Yiyang1,Ren Xiaolin1,Liu Ruizi2,Chen Zehan1,Wu Xuezhao2,Pang Jie3,Wang Wei4,Lan Guibin3,Watanabe Kenji5,Taniguchi Takashi6,Shi Youguo3,Yu Guoqiang3,Shao Qiming12ORCID

Affiliation:

1. Department of Physics The Hong Kong University of Science and Technology Kowloon Hong Kong SAR 999077 China

2. Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong SAR 999077 China

3. Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China

4. Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing 211816 China

5. Research Center for Electronic and Optical Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

6. Research Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Abstract

AbstractThe emerging all‐van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin‐orbit torque (SOT) exerted by the out‐of‐plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all‐vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field‐free switching against external magnetic field has not been examined, which hinders further applications. Here, the study demonstrates the field‐free switching in an all‐vdW heterostructure combining a type‐II Weyl semimetal TaIrTe4 and above‐room‐temperature ferromagnet Fe3GaTe2. The fully field‐free switching can be achieved at 2.56 × 1010 A m−2 at 300 K and a large SOT effective field efficiency of the out‐of‐plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, it is found that the switching polarity cannot be changed until the external in‐plane magnetic field reaches 252 mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. The work shows that all‐vdW heterostructures are promising candidates for future highly efficient and stable SOT‐based devices.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Wiley

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