Spontaneous rotational symmetry breaking in KTaO3 heterointerface superconductors

Author:

Zhang Guanqun,Wang Lijie,Wang Jinghui,Li Guoan,Huang Guangyi,Yang Guang,Xue Huanyi,Ning Zhongfeng,Wu Yueshen,Xu Jin-Peng,Song YanruORCID,An ZhenghuaORCID,Zheng Changlin,Shen JieORCID,Li JunORCID,Chen Yan,Li WeiORCID

Abstract

AbstractBroken symmetries play a fundamental role in superconductivity and influence many of its properties in a profound way. Understanding these symmetry breaking states is essential to elucidate the various exotic quantum behaviors in non-trivial superconductors. Here, we report an experimental observation of spontaneous rotational symmetry breaking of superconductivity at the heterointerface of amorphous (a)-YAlO3/KTaO3(111) with a superconducting transition temperature of 1.86 K. Both the magnetoresistance and superconducting critical field in an in-plane field manifest striking twofold symmetric oscillations deep inside the superconducting state, whereas the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute this behavior to the mixed-parity superconducting state, which is an admixture of s-wave and p-wave pairing components induced by strong spin-orbit coupling inherent to inversion symmetry breaking at the heterointerface of a-YAlO3/KTaO3. Our work suggests an unconventional nature of the underlying pairing interaction in the KTaO3 heterointerface superconductors, and brings a new broad of perspective on understanding non-trivial superconducting properties at the artificial heterointerfaces.

Funder

National Natural Science Foundation of China

Shanghai Science and Technology Development Foundation

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond;Advanced Electronic Materials;2024-01-04

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