Nanocrystalline copper for direct copper-to-copper bonding with improved cross-interface formation at low thermal budget-Reference-Cited by-同舟云学术

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Nanocrystalline copper for direct copper-to-copper bonding with improved cross-interface formation at low thermal budget

Published:2024-08-17 Issue:1 Volume:15 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

He Chuan^ORCID,Zhou Jingzhuo,Zhou Rui,Chen Cong,Jing Siyi,Mu Kaiyu,Huang Yu-Ting,Chung Chih-Chun,Cherng Sheng-Jye,Lu Yang^ORCID,Tu King-Ning,Feng Shien-Ping^ORCID

Funder

Innovation and Technology Commission

Research Grants Council, University Grants Committee

City University of Hong Kong

Publisher

Springer Science and Business Media LLC

Link

https://www.nature.com/articles/s41467-024-51510-7.pdf

Reference57 articles.

1. Tu, K. N. Reliability challenges in 3D IC packaging technology. Microelectron. Reliab. 51, 517–523 (2011).

2. Chen, C., Yu, D. & Chen, K.-N. Vertical interconnects of microbumps in 3D integration. MRS Bull 40, 257–262 (2015).

3. Chen, C. et al. Nanotwinning-assisted structurally stable copper for fine-pitch redistribution layer in 2.5D/3D IC. packaging. J. Mater. Res. Technol. 27, 4883–4890 (2023).

4. Zheng, Z. et al. Electrodeposition of (111)-oriented and nanotwin-doped nanocrystalline Cu with ultrahigh strength for 3D IC application. Nanotechnology 32, 225702 (2021).

5. Zhang, L. et al. Materials, processing and reliability of low temperature bonding in 3D chip stacking. J. Alloys. Compd. 750, 980–995 (2018).

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