Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature-Reference-Cited by-同舟云学术

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Published:2018-04-13 Issue:1 Volume:9 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Lin Shuren,Carvalho Alexandra,Yan Shancheng,Li Roger,Kim Sujung,Rodin Aleksandr,Carvalho Lídia,Chan Emory M.,Wang Xi,Castro Neto Antonio H.^ORCID,Yao Jie

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/s41467-018-03897-3.pdf

Reference36 articles.

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3. Sham, L. J., Allen, S. J. Jr., Kamgar, A. & Tsui, D. C. Valley-valley splitting in inversion layers on a high-index surface of silicon. Phys. Rev. Lett. 40, 472 (1978).

4. Takashina, K., Ono, Y., Fujiwara, A., Takahashi, Y. & Hirayama, Y. Valley polarization in Si(100) at zero magnetic field. Phys. Rev. Lett. 96, 236801 (2006).

5. Shkolnikov, Y. P., Poortere, E. P. D., Tutuc, E. & Shayegan, M. Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field. Phys. Rev. Lett. 89, 22 (2002).

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